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Samsung 8GB DDR3 1600MHz memory module ECC
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Power
Memory voltage
1.35 V
Memory
Buffered memory type
Unregistered (unbuffered)
Memory layout (modules x size)
1 x 8 GB
Internal memory
8 GB
Component for
PC/Server
Memory form factor
240-pin DIMM
CAS latency
11
Memory voltage
1.35 V
Module configuration
1024M x 72
Row cycle time
11 ns
Refresh row cycle time
11 ns
ECC
Yes
Memory clock speed
1600 MHz
Internal memory type
DDR3
Features
Buffered memory type
Unregistered (unbuffered)
Memory layout (modules x size)
1 x 8 GB
Internal memory
8 GB
Component for
PC/Server
Memory form factor
240-pin DIMM
CAS latency
11
Memory voltage
1.35 V
Module configuration
1024M x 72
Row cycle time
11 ns
Refresh row cycle time
11 ns
ECC
Yes
Memory clock speed
1600 MHz
Internal memory type
DDR3
Harmonized System (HS) code
84733020
Operational conditions
Operating temperature (T-T)
0 - 85 °C
Technical details
Sustainability certificates
RoHS
Doesn't contain
Halogen
Sustainability
Sustainability certificates
RoHS
Doesn't contain
Halogen
Weight & dimensions
Width
133.3 mm
Depth
4 mm
Height
30 mm
Logistics data
Harmonized System (HS) code
84733020
Other features
Harmonized System (HS) code
84733020
Samsung 8GB DDR3 1600MHz memory module ECC
| Weight | 1.00 kgs |
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