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Power | |
---|---|
Memory voltage | 1.35 V |
Memory | |
Buffered memory type | Unregistered (unbuffered) |
Memory layout (modules x size) | 1 x 8 GB |
Internal memory | 8 GB |
Component for | PC/Server |
Memory form factor | 240-pin DIMM |
CAS latency | 11 |
Memory voltage | 1.35 V |
Module configuration | 1024M x 72 |
Row cycle time | 11 ns |
Refresh row cycle time | 11 ns |
ECC | Yes |
Memory clock speed | 1600 MHz |
Internal memory type | DDR3 |
Features | |
Buffered memory type | Unregistered (unbuffered) |
Memory layout (modules x size) | 1 x 8 GB |
Internal memory | 8 GB |
Component for | PC/Server |
Memory form factor | 240-pin DIMM |
CAS latency | 11 |
Memory voltage | 1.35 V |
Module configuration | 1024M x 72 |
Row cycle time | 11 ns |
Refresh row cycle time | 11 ns |
ECC | Yes |
Memory clock speed | 1600 MHz |
Internal memory type | DDR3 |
Harmonized System (HS) code | 84733020 |
Operational conditions | |
Operating temperature (T-T) | 0 - 85 °C |
Technical details | |
Sustainability certificates | RoHS |
Doesn't contain | Halogen |
Sustainability | |
Sustainability certificates | RoHS |
Doesn't contain | Halogen |
Weight & dimensions | |
Width | 133.3 mm |
Depth | 4 mm |
Height | 30 mm |
Logistics data | |
Harmonized System (HS) code | 84733020 |
Other features | |
Harmonized System (HS) code | 84733020 |
Samsung 8GB DDR3 1600MHz memory module ECC
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